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Layer control of Sr<sub>1.8</sub>Bi<sub>0.2</sub>Na<sub>n-3</sub>Nb<sub>n</sub>O<sub>3n+1</sub> (n = 3–5) perovskite nanosheets: dielectric to ferroelectric transition of film deposited by Langmuir Blodgett method.
- Published in:
- NPJ 2D Materials & Applications, 2023, v. 7, n. 1, p. 1, doi. 10.1038/s41699-023-00418-9
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- Article
Progressive and Stable Synaptic Plasticity with Femtojoule Energy Consumption by the Interface Engineering of a Metal/Ferroelectric/Semiconductor.
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- Advanced Science, 2022, v. 9, n. 22, p. 1, doi. 10.1002/advs.202201502
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- Article
Progressive and Stable Synaptic Plasticity with Femtojoule Energy Consumption by the Interface Engineering of a Metal/Ferroelectric/Semiconductor.
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- Advanced Science, 2022, v. 9, p. 1, doi. 10.1002/advs.202201502
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- Article
Graphene‐Based Lateral Heterojunctions for 2D Integrated Circuits.
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- Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300761
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- Article
Correlative Multimodal Probing of Ionically-Mediated Electromechanical Phenomena in Simple Oxides.
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- Scientific Reports, 2013, p. 1, doi. 10.1038/srep02924
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- Article
Between Scylla and Charybdis: Hydrophobic Graphene-Guided Water Diffusion on Hydrophilic Substrates.
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- Scientific Reports, 2013, p. 1, doi. 10.1038/srep02309
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- Article
High-Current-Density CuO <sub>x</sub>/InZnO<sub>x</sub> Thin-Film Diodes for Cross-Point Memory Applications.
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- Advanced Materials, 2008, v. 20, n. 16, p. 3066, doi. 10.1002/adma.200702932
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- Article
Charge Transport in UV-Oxidized Graphene and Its Dependence on the Extent of Oxidation.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 16, p. 2845, doi. 10.3390/nano12162845
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- Article
Ion-Movement-Based Synaptic Device for Brain-Inspired Computing.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 10, p. 1728, doi. 10.3390/nano12101728
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- Article
Interpreting the Entire Connectivity of Individual Neurons in Micropatterned Neural Culture With an Integrated Connectome Analyzer of a Neuronal Network (iCANN).
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- Frontiers in Neuroanatomy, 2021, v. 15, p. 1, doi. 10.3389/fnana.2021.746057
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- Article
Magnetic Skyrmion Transistor Gated with Voltage‐Controlled Magnetic Anisotropy (Adv. Mater. 9/2023).
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- Advanced Materials, 2023, v. 35, n. 9, p. 1, doi. 10.1002/adma.202370064
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- Article
Magnetic Skyrmion Transistor Gated with Voltage‐Controlled Magnetic Anisotropy.
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- Advanced Materials, 2023, v. 35, n. 9, p. 1, doi. 10.1002/adma.202208881
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- Article
Excimer-ultraviolet-lamp-assisted selective etching of single-layer graphene and its application in edge-contact devices.
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- Nano Convergence, 2024, v. 11, n. 1, p. 1, doi. 10.1186/s40580-024-00442-5
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- Article
Demonstration of an energy-efficient Ising solver composed of Ovonic threshold switch (OTS)-based nano-oscillators (OTSNOs).
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- Nano Convergence, 2024, v. 11, n. 1, p. 1, doi. 10.1186/s40580-024-00429-2
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- Article
Semiconductor-less vertical transistor with ION/IOFF of 106.
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- Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-21138-y
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- Article
Large Resistive Switching in Ferroelectric BiFeO<sub>3</sub> Nano-Island Based Switchable Diodes.
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- Advanced Materials, 2013, v. 25, n. 16, p. 2339, doi. 10.1002/adma.201204839
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- Article
Twist angle-dependent transport properties of twisted bilayer graphene.
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- NPG Asia Materials, 2024, v. 16, n. 1, p. 1, doi. 10.1038/s41427-024-00556-6
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- Article
Implementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte.
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- NPG Asia Materials, 2023, v. 15, n. 1, p. 1, doi. 10.1038/s41427-023-00481-0
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- Article
Reversible quenching of luminescence in ZnO films by electric field action.
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- Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 5, p. 307, doi. 10.1002/pssr.201510071
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- Article
Role of fatty acid composites in the toxicity of titanium dioxide nanoparticles used in cosmetic products.
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- Journal of Toxicological Sciences, 2016, v. 41, n. 4, p. 533, doi. 10.2131/jts.41.533
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- Article
Strain Mismatch Induced Tilted Heteroepitaxial (000 l) Hexagonal ZnO Films on (001) Cubic Substrates.
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- Advanced Engineering Materials, 2011, v. 13, n. 12, p. 1142, doi. 10.1002/adem.201100106
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- Article
DIELECTRIC PROPERTIES OF EPITAXIAL FILMS ON SUBSTRATES.
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- Functional Materials Letters, 2011, v. 4, n. 1, p. 41, doi. 10.1142/S1793604711001610
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- Article
EFFECTS OF ARGON<sup>+</sup> ION BOMBARDMENT ON A PLATINUM/ZIRCONIUM DIOXIDE/IRIDIUM RESISTIVE SWITCHING MEMORY CELL.
- Published in:
- Functional Materials Letters, 2011, v. 4, n. 1, p. 71, doi. 10.1142/S1793604711001671
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- Article
Gate-tunable photodetector and ambipolar transistor implemented using a graphene/MoSe<sub>2</sub> barristor.
- Published in:
- NPG Asia Materials, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41427-021-00281-4
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- Publication type:
- Article
Gate-tunable photodetector and ambipolar transistor implemented using a graphene/MoSe<sub>2</sub> barristor.
- Published in:
- NPG Asia Materials, 2021, v. 13, n. 1, p. 1, doi. 10.1038/s41427-021-00281-4
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- Publication type:
- Article
Understanding filamentary growth and rupture by Ag ion migration through single-crystalline 2D layered CrPS<sub>4</sub>.
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- NPG Asia Materials, 2020, v. 12, n. 1, p. 1, doi. 10.1038/s41427-020-00272-x
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- Article
Understanding filamentary growth and rupture by Ag ion migration through single-crystalline 2D layered CrPS<sub>4</sub>.
- Published in:
- NPG Asia Materials, 2020, v. 12, n. 1, p. 1, doi. 10.1038/s41427-020-00272-x
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- Article
Universality of strain-induced anisotropic friction domains on 2D materials.
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- NPG Asia Materials, 2018, v. 10, n. 11, p. 1069, doi. 10.1038/s41427-018-0098-2
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- Article
Large linear magnetoresistance in heavily-doped Nb:SrTiO<sub>3</sub> epitaxial thin films.
- Published in:
- Scientific Reports, 2016, p. 34295, doi. 10.1038/srep34295
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- Article
Real-time device-scale imaging of conducting filament dynamics in resistive switching materials.
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- Scientific Reports, 2016, p. 27451, doi. 10.1038/srep27451
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- Article
Selector-free resistive switching memory cell based on BiFeO<sub>3</sub> nano-island showing high resistance ratio and nonlinearity factor.
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- Scientific Reports, 2016, p. 23299, doi. 10.1038/srep23299
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- Article
Enhancement of resistive switching under confined current path distribution enabled by insertion of atomically thin defective monolayer graphene.
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- Scientific Reports, 2015, p. 11279, doi. 10.1038/srep11279
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- Article
Configuration of ripple domains and their topological defects formed under local mechanical stress on hexagonal monolayer graphene.
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- Scientific Reports, 2015, p. 9390, doi. 10.1038/srep09390
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- Article
Correlation between micrometer-scale ripple alignment and atomic-scale crystallographic orientation of monolayer graphene.
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- Scientific Reports, 2014, p. 1, doi. 10.1038/srep07263
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- Article
Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) technique.
- Published in:
- Scientific Reports, 2014, p. 1, doi. 10.1038/srep06871
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- Article
Growth Behavior and Electrical Properties of a (Na<sub>0.5</sub>K<sub>0.5</sub>)NbO<sub>3</sub>Thin Film Deposited on a Pt/Ti/SiO<sub>2</sub>/Si Substrate Using RFMagnetron Sputtering.
- Published in:
- Journal of the American Ceramic Society, 2011, v. 94, n. 7, p. 1970, doi. 10.1111/j.1551-2916.2011.04574.x
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- Article