We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Preparation and properties of humidity sensor based on K-doped ZnO nanostructure.
- Authors
Gu, Yang; Ye, Zi; Sun, Ning; Kuang, Xuliang; Liu, Weijing; Song, Xiaojun; Zhang, Lei; Bai, Wei; Tang, Xiaodong
- Abstract
KxZn1−xO (X = 0%, 3%, 5%, 10%) nanowires have been synthesized through hydrothermal method and characterized by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy. Dielectrophoresis nano-manipulation technique was employed to arrange the materials on pre-designed Ti/Au electrodes to fabricate the humidity sensors, and the humidity sensing properties of sensors were investigated. The experimental results show that K-doped ZnO humidity sensors exhibit more excellent humidity sensing than the undoped ZnO humidity sensor. Especially, 5% K-doped ZnO humidity sensor show the highest sensitivity, the response time reduced from 32 to 12 s, and have lower hysteresis and better reproducibility. The improvement of humidity sensing performance is explained by the increase of oxygen vacancy defects due to the K doping process. In addition, the sensing mechanism was analyzed by complex impedance spectroscopy and multilayer adsorption theory. These results demonstrate the potential application of K-doped ZnO nanowires for fabricating high performance humidity sensors.
- Subjects
ZINC oxide synthesis; HUMIDITY; X-ray photoelectron spectroscopy; ZINC oxide; SCANNING electron microscopy; DETECTORS
- Publication
Journal of Materials Science: Materials in Electronics, 2019, Vol 30, Issue 20, p18767
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-019-02230-y