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- Title
Improving the grain size of Cu2ZnSnS4 thin films by annealing thermally evaporated Cu-ZnS-Sn-S precursors.
- Authors
Chalapathi, U.; Scarpulla, M. A.; Park, Si-Hyun; Uthanna, S.; Raja, V. Sundara
- Abstract
In this study, Cu2ZnSnS4 (CZTS) thin films were grown on Mo-coated glass substrates by thermal evaporation of the precursor layers followed by annealing in a graphite box. The effect of annealing on the grain growth and morphology of the CZTS thin films was investigated at two different temperatures and S2 partial pressures. X-ray diffraction and Raman spectroscopy analyses confirmed the formation of CZTS films with a kesterite structure with (112) preferred orientation. The grain growth was significantly enhanced by annealing the stacks at 550∘C for 30 min at a S2 partial pressure of 1.2×104Pa. The grain size was found to be in the range of 1.0-2.0μm. The same grain size was obtained by carrying out the annealing at 580∘C and a S2 partial pressure of 1.96×104Pa just for 10 min. This grain size was much larger than the grain size of CZTS films obtained from annealing the stacks in two-zone tubular furnaces.
- Subjects
ANNEALING of metals; THIN films; COPPER compounds; KESTERITE; X-ray diffraction
- Publication
Journal of Materials Science: Materials in Electronics, 2019, Vol 30, Issue 5, p4931
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-019-00788-1