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- Title
Unidirectional Neuromorphic Resistive Memory Integrated with Piezoelectric Nanogenerator for Self‐Power Electronics.
- Authors
Khan, Muhammad Umair; Abbas, Yawar; Rezeq, Moh'd; Alazzam, Anas; Mohammad, Baker
- Abstract
This study presents a method to enhance data processing by integrating a unidirectional analogue artificial neuromorphic memristor device with a piezoelectric nanogenerator, taking inspiration from biological information processing. A self‐powered unidirectional neuromorphic resistive memory device is proposed, comprising an ITO/ZnO/Yb2O3/Au structure combined with a high‐sensitivity piezoelectric nanogenerator (PENG) ITO/ZnO/Al. The memristor device is operated at a voltage sweep of ±4 V with a low operating current in a range of 1.4 µA. The filament formation is studied using a conductive mode atomic force microscope. The integration enables the creation of a self‐powered artificial sensing system that converts mechanical stimuli from the PENG into electrical signals, which are subsequently processed by analogue unidirectional neuromorphic device to mimic the functionality of a neuron without requiring additional circuitry. This emulation encompasses crucial functions such as potentiation, depression, and synaptic plasticity. Furthermore, this study highlights the potential for hardware implementations of neural networks with a weight change of memristor device with nonlinearity (NL) of potentiation and depression of 1.94 and 0.89, respectively, with an accuracy of 93%. The outcomes of this research contribute to the progress of next‐generation low‐power, self‐powered unidirectional neuromorphic perception networks with correlated learning and trainable memory capabilities.
- Subjects
MEMRISTORS; ATOMIC force microscopes; PIEZOELECTRIC devices; NEUROPLASTICITY; NANOGENERATORS; NANOPOSITIONING systems; NONVOLATILE random-access memory
- Publication
Advanced Functional Materials, 2024, Vol 34, Issue 15, p1
- ISSN
1616-301X
- Publication type
Article
- DOI
10.1002/adfm.202305869