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- Title
Diffusion of electrons scattered by short-range impurities in a quantizing magnetic field.
- Authors
Andreev, S. P.; Pavlova, T. V.
- Abstract
Formulas for transverse diffusion and conductivity in a semiconductor are obtained for electrons scattered by neutral impurities in a quantizing magnetic field. The formulas are valid for an impurity potential of arbitrary depth. Based on Kubo’s theory [1], calculations are performed using electron wavefunctions of the problem of single-impurity scattering in a magnetic field [2]. The poles of the scattering amplitude correctly determine electron eigenstates and magnetic impurity states. As a result, an exact expression is found for the dependence of transverse diffusion coefficient D ⊥ on longitudinal electron energy ɛ due to scattering by short-range (neutral) impurities. The behavior of D ⊥(ɛ) is examined over an interval of magnetic field strength for several values of impurity potential depth. The experimental observability of diffusion and conductivity using IR lasers is discussed.
- Subjects
SEMICONDUCTOR doping; ELECTRON scattering; MAGNETIC fields; OPTOELECTRONIC devices; SCATTERING (Physics)
- Publication
Journal of Experimental & Theoretical Physics, 2008, Vol 106, Issue 4, p788
- ISSN
1063-7761
- Publication type
Article
- DOI
10.1134/S1063776108040183