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- Title
High near infrared absorption of hyper-doped silicon induced by co-doping of sulfur and nitrogen.
- Authors
Xuan, Yaoyu; Zhang, Ting; Liu, Bohan; Yang, Ruihan; Ahmad, Waseem; Liu, Zhijun; Chen, Zhi; Li, Shibin
- Abstract
In this paper, we investigate the dependence of NIR absorption of hyper-doped silicon on different sulfur and nitrogen doping ratio. With different molecular proportion of N2 and SF6 background gas, femtosecond laser irradiation was used to implant co-doping of sulfur and nitrogen into silicon. The hyper-doped silicon presents high absorption properties in NIR and visible range. The results of first-principles calculations demonstrate the high absorption in NIR is ascribed to the induced impurity energy levels in hyper-doped silicon. The nitrogen doping process improves the crystallinity in the doped layer because the doped nitrogen repairs defects in silicon lattices. Given the thermal stability of nitrogen, the co-doping dopants limit the diffusion of sulfur during the annealing process. The co-doping process proposed in this paper provides a method to fabricate high performance NIR silicon optoelectronic device.
- Subjects
ELECTRIC properties of silicon; SEMICONDUCTOR doping; OPTOELECTRONIC device performance; NEAR infrared radiation; PHOTODETECTORS; COMPLEMENTARY metal oxide semiconductors; CRYSTALLINITY
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2016, Vol 213, Issue 11, p2855
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201600524