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- Title
COMPOSITION RELATED ELECTRICAL ACTIVE DEFECT STATES OF INGAAS AND GAASN.
- Authors
KOSA, Arpad; STUCHLIKOVA, Lubica; HARMATHA, Ladislav; KOVAC, Jaroslav; SCIANA, Beata; DAWIDOWSKI, Wojciech; TLACZALA, Marek
- Abstract
This paper discusses results of electrically active defect states - deep energy level analysis in In- GaAs and GaAsN undoped semiconductor structures grown for solar cell applications. Main attention is focused on composition and growth condition dependent impurities and the investigation of their possible origins. For this purpose a widely utilized spectroscopy method, Deep Level Transient Fourier Spectroscopy, was utilized. The most significant responses of each sample labelled as InG2, InG3 and NG1, NG2 were discussed in detail and confirmed by simulations and literature data. The presence of a possible dual conduction type and dual state defect complex, dependent on the In/N composition, is reported. Beneficial characteristics of specific indium and nitrogen concentrations capable of eliminating or reducing certain point defects and dislocations are stated.
- Subjects
SEMICONDUCTOR defects; DEEP level transient spectroscopy; INDIUM; SOLAR cells; LITERATURE databases
- Publication
Advances in Electrical & Electronic Engineering, 2017, Vol 15, Issue 1, p114
- ISSN
1336-1376
- Publication type
Article
- DOI
10.15598/aeee.v15i1.2023