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- Title
Temperature-dependent electron Hall mobility in LPE-grown InPBi/InP epilayers.
- Authors
Sharma, Akant Sagar; Malathi, N.; Das, Subhasis; Kini, R. N.
- Abstract
In the present work, we study the temperature-dependent (30–300 K) electron Hall mobility of liquid phase epitaxy (LPE)-grown n-type InPBi/InP epilayers prepared using growth melts containing high Bi (≈ 18 wt%) content. InPBi epilayer grown with 1.5 wt% Bi-containing melt has the highest Bi content, 0.8 at%, and shows no significant reduction in electron mobility (2150 cm2/V s at 300 K). However, InPBi epilayers grown with the highest Bi-containing melt (18 wt%) have less Bi content in the epilayer (0.36 at%) but show a significantly reduced room temperature electron mobility (96 cm2/V s). We find that the concentration of neutral impurity scatters increases with increasing Bi content in the growth melt. From the analysis of temperature-dependent mobility, we find that the Bi–Bi pairs/clusters or defect complexes play the dominant role in reducing electron mobility in the LPE-grown InPBi epilayer.
- Subjects
ELECTRON mobility; LIQUID phase epitaxy; CHARGE carrier mobility
- Publication
Journal of Materials Science: Materials in Electronics, 2023, Vol 34, Issue 5, p1
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-023-09920-8