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- Title
Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds by Isovalent Bismuth Doping.
- Authors
Zhao, Lijun; Wang, Mingyuan; Yang, Jian; Hu, Jiabin; Zhu, Yuan; Liu, Guiwu; Hussain, Shahid; Shao, Haicheng; Lei, Shuangying; Wan, Neng; Shi, Zhongqi; Qiao, Guanjun
- Abstract
Cu3SbSe4, featuring its earth-abundant, cheap, nontoxic and environmentally friendly constituent elements, can be considered as a promising intermediate temperature thermoelectric (TE) material. Herein, a series of p-type Bi-doped Cu3Sb1−xBixSe4 (x = 0–0.04) samples were fabricated through melting and hot pressing process, and the effects of isovalent Bi-doping on their TE properties were comparatively investigated by experimental and computational methods. TEM analysis indicates that Bi-doped samples consist of Cu3SbSe4 and Cu2−xSe impurity phases, which is in good agreement with the results of XRD, SEM and XPS. For Bi-doped samples, the reduced electrical resistivity (ρ) caused by the optimized carrier concentrations and enhanced Seebeck coefficient derived from the densities of states near the Fermi level give rise to a high power factor of ~ 1000 µWm−1 K−2 at 673 K for the Cu3Sb0.985Bi0.015Se4 sample. Additionally, the multiscale defects of Cu3SbSe4-based materials involving point defects, nanoprecipitates, amorphous phases and grain boundaries can strongly scatter phonons to depress lattice thermal conductivity (κlat), resulting in a low κlat of ~ 0.53 Wm−1 K−1 and thermal conductivity (κtot) of ~ 0.62 Wm−1 K−1 at 673 K for the Cu3Sb0.98Bi0.02Se4 sample. As a consequence, a maximum ZT value ~ 0.95 at 673 K is obtained for the Cu3Sb0.985Bi0.015Se4 sample, which is ~ 1.9 times higher than that of pristine Cu3SbSe4. This work shows that isovalent heavy element doping is an effective strategy to optimize thermoelectric properties of copper-based chalcogenides.
- Subjects
THERMOELECTRIC materials; BISMUTH compounds; DOPING agents (Chemistry); THERMAL conductivity; SEEBECK coefficient; GALLIUM antimonide; BISMUTH
- Publication
Journal of Materials Science: Materials in Electronics, 2021, Vol 32, Issue 14, p18849
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-021-06403-6