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Properties of Semipolar GaN Grown on a Si(100) Substrate.
Published in:
Semiconductors, 2019, v. 53, n. 7, p. 989, doi. 10.1134/S1063782619070054
By:
- Bessolov, V. N.;
- Konenkova, E. V.;
- Orlova, T. A.;
- Rodin, S. N.;
- Seredova, N. V.;
- Solomnikova, A. V.;
- Shcheglov, M. P.;
- Kibalov, D. S.;
- Smirnov, V. K.
Publication type:
Article
A study of thick 3 C-SiC epitaxial layers grown on 6 H-SiC substrates by sublimation epitaxy in vacuum.
Published in:
Semiconductors, 2007, v. 41, n. 3, p. 263, doi. 10.1134/S1063782607030037
By:
- Lebedev, A. A.;
- Zelenin, V. V.;
- Abramov, P. L.;
- Bogdanova, E. V.;
- Lebedev, S. P.;
- Nel'son, D. K.;
- Razbirin, B. S.;
- Shcheglov, M. P.;
- Tregubova, A. S.;
- Suvajarvi, M.;
- Yakimova, R.
Publication type:
Article
A study of n +-6 H/ n-3 C/ p +-6 H-SiC heterostructures grown by sublimation epitaxy.
Published in:
Semiconductors, 2006, v. 40, n. 12, p. 1398, doi. 10.1134/S1063782606120050
By:
- Lebedev, A. A.;
- Strel’chuk, A. M.;
- Davydov, S. Yu.;
- Cherenkov, A. E.;
- Kuznetsov, A. N.;
- Tregubova, A. S.;
- Sorokin, L. M.;
- Shcheglov, M. P.;
- Sadokhin, A. V.;
- Yoneda, S.;
- Nishino, S.
Publication type:
Article
X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals.
Published in:
Technical Physics, 2010, v. 55, n. 4, p. 537, doi. 10.1134/S1063784210040183
By:
- Shul'pina, I. L.;
- Kyutt, R. N.;
- Ratnikov, V. V.;
- Prokhorov, I. A.;
- Bezbakh, I. Zh.;
- Shcheglov, M. P.
Publication type:
Article
X-ray study of dopant state in highly doped semiconductor single crystals.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 1, p. 62
By:
- Shul'pina, I. L.;
- Kyutt, R. N.;
- Ratnikov, V. V.;
- Prokhorov, I. A.;
- Bezbakh, I. Zh.;
- Shcheglov, M. P.
Publication type:
Article
Electron-microscopic investigation of a SiC/Si(111) structure obtained by solid phase epitaxy.
Published in:
Technical Physics Letters, 2008, v. 34, n. 11, p. 992, doi. 10.1134/S1063785008110278
By:
- Sorokin, L. M.;
- Veselov, N. V.;
- Shcheglov, M. P.;
- Kalmykov, A. E.;
- Sitnikova, A. A.;
- Feoktistov, N. A.;
- Osipov, A. V.;
- Kukushkin, S. A.
Publication type:
Article
Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer.
Published in:
Technical Physics Letters, 2008, v. 34, n. 6, p. 479, doi. 10.1134/S1063785008060084
By:
- Aksyanov, I. G.;
- Bessolov, V. N.;
- Zhilyaev, Yu. V.;
- Kompan, M. E.;
- Konenkova, E. V.;
- Kukushkin, S. A.;
- Osipov, A. V.;
- Rodin, S. N.;
- Feoktistov, N. A.;
- Sharofidinov, Sh.;
- Shcheglov, M. P.
Publication type:
Article
Studying 3C-SiC epilayers grown on the (0001)C face of 6H-SiC substrates.
Published in:
Technical Physics Letters, 2007, v. 33, n. 6, p. 524, doi. 10.1134/S1063785007060235
By:
- Lebedev, A. A.;
- Zelenin, V. V.;
- Abramov, P. L.;
- Lebedev, S. P.;
- Smirnov, A. N.;
- Sorokin, L. M.;
- Shcheglov, M. P.;
- Yakimova, R.
Publication type:
Article
Chloride vapor-phase epitaxy of gallium nitride on silicon: Structural and luminescent characteristics of epilayers.
Published in:
Technical Physics Letters, 2006, v. 32, n. 8, p. 674, doi. 10.1134/S1063785006080116
By:
- Bessolov, V. N.;
- Botnaryuk, V. M.;
- Zhilyaev, Yu. V.;
- Konenkova, E. V.;
- Poletaev, N. K.;
- Raevskiĭ, S. D.;
- Rodin, S. N.;
- Smirnov, S. L.;
- Sharofidinov, Sh.;
- Shcheglov, M. P.;
- Hee Seok Park;
- Koike, Masayoshi
Publication type:
Article
Heteropolytype Structures with SiC Quantum Dots.
Published in:
Technical Physics Letters, 2005, v. 31, n. 12, p. 997, doi. 10.1134/1.2150879
By:
- Lebedev, A. A.;
- Petrov, V. N.;
- Titkov, A. N.;
- Sorokin, L. M.;
- Tregubova, A. S.;
- Mosina, G. N.;
- Cherenkov, A. E.;
- Shcheglov, M. P.
Publication type:
Article
GaN Films Grown by Vapor-Phase Epitaxy in a Hydride–Chloride System on Si(111) Substrates with AlN Buffer Sublayers.
Published in:
Technical Physics Letters, 2005, v. 31, n. 11, p. 915, doi. 10.1134/1.2136951
By:
- Bessolov, V. N.;
- Davydov, V. Yu.;
- Zhilyaev, Yu. V.;
- Konenkova, E. V.;
- Mosina, G. N.;
- Raevskiǐ, S. D.;
- Rodin, S. N.;
- Sharofidinov, Sh.;
- Shcheglov, M. P.;
- Park, Hee Seok;
- Koike, Masayoshi
Publication type:
Article
Bulk GaN Layers Grown on Oxidized Silicon by Vapor-Phase Epitaxy in a Hydride–Chloride System.
Published in:
Technical Physics Letters, 2005, v. 31, n. 5, p. 367, doi. 10.1134/1.1931770
By:
- Zhilyaev, Yu. V.;
- Raevskii, S. D.;
- Grabko, D. Z.;
- Leu, D. S.;
- Kompan, M. E.;
- Yusupova, Sh. A.;
- Shcheglov, M. P.
Publication type:
Article
Bulk Large-Area GaN Layers.
Published in:
Technical Physics Letters, 2003, v. 29, n. 5, p. 400, doi. 10.1134/1.1579807
By:
- Zhilyaev, Yu. V.;
- Nasonov, A. V.;
- Raevskiı, S. D.;
- Rodin, S. N.;
- Shcheglov, M. P.;
- Yusupova, Sh. A.;
- Davydov, V. Yu.
Publication type:
Article
Real structure of Cd[sub 2]Nb[sub 2]O[sub 7] pyrochlore single crystals.
Published in:
Technical Physics Letters, 1999, v. 25, n. 7, p. 561, doi. 10.1134/1.1262553
By:
- Shul’pina, I. L.;
- Kolpakova, N. N.;
- Shcheglov, M. P.;
- Lebedev, A. O.
Publication type:
Article
Synthesis of Hexagonal AlN and GaN Layers on a Si(100) Substrate by Chloride Vapor-Phase Epitaxy.
Published in:
Technical Physics, 2019, v. 64, n. 4, p. 531, doi. 10.1134/S1063784219040054
By:
- Bessolov, V. N.;
- Gushchina, E. V.;
- Konenkova, E. V.;
- Konenkov, S. D.;
- L'vova, T. V.;
- Panteleev, V. N.;
- Shcheglov, M. P.
Publication type:
Article
Effect of Structural Imperfection on the Spectrum of Deep Levels in 6H-SiC.
Published in:
Semiconductors, 2001, v. 35, n. 12, p. 1372, doi. 10.1134/1.1427973
By:
- Lebedev, A. A.;
- Davydov, D. V.;
- Tregubova, A. S.;
- Bogdanova, E. V.;
- Shcheglov, M. P.;
- Pavlenko, M. V.
Publication type:
Article
Structural Defects and Deep-Level Centers in 4H-SiC Epilayers Grown by Sublimational Epitaxy in Vacuum.
Published in:
Semiconductors, 2000, v. 34, n. 10, p. 1133, doi. 10.1134/1.1317570
By:
- Lebedev, A. A.;
- Davydov, D. V.;
- Savkina, N. S.;
- Tregubova, A. S.;
- Shcheglov, M. P.;
- Yakimova, R.;
- Syväjärvi, M.;
- Janzén, E.
Publication type:
Article
Investigation of the heteroexpitaxial structures {p-3C/n-6H}-SiC.
Published in:
Semiconductors, 1997, v. 31, n. 9, p. 926, doi. 10.1134/1.1187154
By:
- Lebedev, A. A.;
- Savkina, N. S.;
- Tregubova, A. S.;
- Shcheglov, M. P.
Publication type:
Article
Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates.
Published in:
Semiconductors, 1997, v. 31, n. 3, p. 232, doi. 10.1134/1.1187112
By:
- Andreev, A. N.;
- Smirnova, N. Yu.;
- Tregubova, A. S.;
- Shcheglov, M. P.;
- Chelnokov, V. E.
Publication type:
Article
On the Structural Perfection of Large-Diameter Silicon Carbide Ingots.
Published in:
Inorganic Materials, 2020, v. 56, n. 9, p. 928, doi. 10.1134/S0020168520090034
By:
- Bykov, Yu. O.;
- Lebedev, A. O.;
- Shcheglov, M. P.
Publication type:
Article
Synthesis of Thin Single-Crystalline α-Cr2O3 Layers on Sapphire Substrates by Ultrasonic-Assisted Chemical Vapor Deposition.
Published in:
Technical Physics Letters, 2023, v. 49, p. S284, doi. 10.1134/S1063785023010273
By:
- Nikolaev, V. I.;
- Timashov, R. B.;
- Stepanov, A. I.;
- Stepanov, S. I.;
- Chikiryaka, A. V.;
- Shcheglov, M. P.;
- Polyakov, A. Ya.
Publication type:
Article
Vapor-Phase Epitaxy of AlN Layers on AlN/Si(111) Templates Synthesized by Reactive Magnetron Sputtering.
Published in:
Technical Physics Letters, 2020, v. 46, n. 4, p. 382, doi. 10.1134/S1063785020040185
By:
- Bessolov, V. N.;
- Gruzinov, N. D.;
- Kompan, M. E.;
- Konenkova, E. V.;
- Panteleev, V. N.;
- Rodin, S. N.;
- Shcheglov, M. P.
Publication type:
Article
Thick Epitaxial α-Ga2O3:Sn Layers on a Patterned Sapphire Substrate.
Published in:
Technical Physics Letters, 2020, v. 46, n. 3, p. 228, doi. 10.1134/S106378502003013X
By:
- Nikolaev, V. I.;
- Pechnikov, A. I.;
- Guzilova, L. I.;
- Chikiryaka, A. V.;
- Shcheglov, M. P.;
- Nikolaev, V. V.;
- Stepanov, S. I.;
- Vasil'ev, A. A.;
- Shchemerov, I. V.;
- Polyakov, A. Ya.
Publication type:
Article
Epitaxy of GaN(0001) and GaN(101) Layers on Si(100) Substrate.
Published in:
Technical Physics Letters, 2019, v. 45, n. 6, p. 529, doi. 10.1134/S106378501906004X
By:
- Bessolov, V. N.;
- Kompan, M. E.;
- Konenkova, E. V.;
- Panteleev, V. N.;
- Rodin, S. N.;
- Shcheglov, M. P.
Publication type:
Article
Reciprocal-Space Maps of X-Ray Diffraction Intensity Distribution and Their Relation to the Dislocation Structure of Epitaxial Layers.
Published in:
Technical Physics Letters, 2018, v. 44, n. 6, p. 548, doi. 10.1134/S106378501806024X
By:
- Kyutt, R. N.;
- Shcheglov, M. P.
Publication type:
Article
Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate.
Published in:
Technical Physics Letters, 2018, v. 44, n. 6, p. 525, doi. 10.1134/S1063785018060172
By:
- Bessolov, V. N.;
- Konenkova, E. V.;
- Orlova, T. A.;
- Rodin, S. N.;
- Shcheglov, M. P.;
- Kibalov, D. S.;
- Smirnov, V. K.
Publication type:
Article
Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate.
Published in:
Technical Physics Letters, 2018, v. 44, n. 1, p. 81, doi. 10.1134/S106378501801011X
By:
- Bessolov, V. N.;
- Gushchina, E. V.;
- Konenkova, E. V.;
- L'vova, T. V.;
- Panteleev, V. N.;
- Shcheglov, M. P.
Publication type:
Article
Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology.
Published in:
Technical Physics Letters, 2010, v. 36, n. 6, p. 496, doi. 10.1134/S1063785010060039
By:
- Bessolov, V. N.;
- Zhilyaev, Yu. V.;
- Konenkova, E. V.;
- Sorokin, L. M.;
- Feoktistov, N. A.;
- Sharofidinov, Sh.;
- Shcheglov, M. P.;
- Kukushkin, S. A.;
- Mets, L. I.;
- Osipov, A. V.
Publication type:
Article
Separation of Phases and Charge States in Relaxor Ferroelectric PbCo1/3Nb2/3O3.
Published in:
Journal of Experimental & Theoretical Physics, 2020, v. 130, n. 3, p. 439, doi. 10.1134/S1063776120030048
By:
- Khannanov, B. Kh.;
- Zalessky, V. G.;
- Golovenchits, E. I.;
- Sanina, V. A.;
- Smirnova, T. A.;
- Shcheglov, M. P.;
- Bokov, V. A.;
- Lushnikov, S. G.
Publication type:
Article

Found: 29

Properties of Semipolar GaN Grown on a Si(100) Substrate.

A study of thick 3 C-SiC epitaxial layers grown on 6 H-SiC substrates by sublimation epitaxy in vacuum.

A study of n <sup>+</sup>-6 H/ n-3 C/ p <sup>+</sup>-6 H-SiC heterostructures grown by sublimation epitaxy.

X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals.

X-ray study of dopant state in highly doped semiconductor single crystals.

Electron-microscopic investigation of a SiC/Si(111) structure obtained by solid phase epitaxy.

Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer.

Studying 3C-SiC epilayers grown on the (0001)C face of 6H-SiC substrates.

Chloride vapor-phase epitaxy of gallium nitride on silicon: Structural and luminescent characteristics of epilayers.

Heteropolytype Structures with SiC Quantum Dots.

GaN Films Grown by Vapor-Phase Epitaxy in a Hydride–Chloride System on Si(111) Substrates with AlN Buffer Sublayers.

Bulk GaN Layers Grown on Oxidized Silicon by Vapor-Phase Epitaxy in a Hydride–Chloride System.

Bulk Large-Area GaN Layers.

Real structure of Cd[sub 2]Nb[sub 2]O[sub 7] pyrochlore single crystals.

Synthesis of Hexagonal AlN and GaN Layers on a Si(100) Substrate by Chloride Vapor-Phase Epitaxy.

Effect of Structural Imperfection on the Spectrum of Deep Levels in 6H-SiC.

Structural Defects and Deep-Level Centers in 4H-SiC Epilayers Grown by Sublimational Epitaxy in Vacuum.

Investigation of the heteroexpitaxial structures {p-3C/n-6H}-SiC.

Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates.

On the Structural Perfection of Large-Diameter Silicon Carbide Ingots.

Synthesis of Thin Single-Crystalline α-Cr<sub>2</sub>O<sub>3</sub> Layers on Sapphire Substrates by Ultrasonic-Assisted Chemical Vapor Deposition.

Vapor-Phase Epitaxy of AlN Layers on AlN/Si(111) Templates Synthesized by Reactive Magnetron Sputtering.

Thick Epitaxial α-Ga2O3:Sn Layers on a Patterned Sapphire Substrate.

Epitaxy of GaN(0001) and GaN(101) Layers on Si(100) Substrate.

Reciprocal-Space Maps of X-Ray Diffraction Intensity Distribution and Their Relation to the Dislocation Structure of Epitaxial Layers.

Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate.

Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate.

Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology.

Separation of Phases and Charge States in Relaxor Ferroelectric PbCo1/3Nb2/3O3.