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- Title
Investigation of the Characteristics of the InGaAs/InAlGaAs Superlattice for 1300 nm Range Vertical-Cavity Surface-Emitting Lasers.
- Authors
Blokhin, S. A.; Babichev, A. V.; Gladyshev, A. G.; Karachinsky, L. Ya.; Novikov, I. I.; Blokhin, A. A.; Bobrov, M. A.; Maleev, N. A.; Kuzmenkov, A. G.; Nadtochiy, A. M.; Nevedomskiy, V. N.; Andryushkin, V. V.; Rochas, S. S.; Denisov, D. V.; Voropaev, K. O.; Zhumaeva, I. O.; Ustinov, V. M.; Egorov, A. Yu.; Bougrov, V. E.
- Abstract
X-ray structural analysis and photoluminescence spectroscopy techniques were used to study heterostructures based on InGaAs/InAlGaAs superlattice for active regions of 1300 nm range lasers grown by molecular beam epitaxy. It is shown that the grown heterostructures have a high crystal quality. The perpendicular lattice mismatch of the average crystal lattice constant of the InGaAs/InAlGaAs superlattice with respect to the crystal lattice constant of the InP substrate is estimated at ~ +0.01%. An analysis of the photoluminescence spectra made it possible to conclude that the contribution of Auger recombination is insignificant in the studied range of excitation power density. Studies of vertical-cavity surface-emitting lasers with an active region based on the InGaAs/InAlGaAs superlattice made it possible to estimate the gain coefficient at a level of 650 cm–1 for the standard logarithmic approximation of the dependence of the gain on the current density. The transparency current density of the laser was 400–630 A/cm2, which is comparable to the record low values for the case of highly strained InGaAs–GaAs and InGaAsN–GaAs quantum wells in the spectral ranges of 1300 nm, respectively.
- Subjects
SURFACE emitting lasers; INDIUM gallium arsenide; ELECTRON-hole recombination; MOLECULAR beam epitaxy; MOLECULAR gas lasers; SEMICONDUCTOR lasers
- Publication
Technical Physics, 2023, Vol 68, Issue 12, p549
- ISSN
1063-7842
- Publication type
Article
- DOI
10.1134/S1063784223080078