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- Title
Gate All around with Back Gate NAND Flash Structure for Excellent Reliability Characteristics in Program Operation.
- Authors
Sim, Jae-Min; Kim, Bong-Seok; Nam, In-Ho; Song, Yun-Heub
- Abstract
A gate all around with back-gate (GAAB) structure was proposed for 3D NAND Flash memory technology. We demonstrated the excellent characteristics of the GAAB NAND structure, especially in the self-boosting operation. Channel potential of GAAB shows a gradual slope compared with a conventional GAA NAND structure, which leads to excellent reliability characteristics in program disturbance, pass disturbance and oxide break down issue. As a result, the GAAB structure is expected to be appropriate for a high stacking structure of future memory structure.
- Subjects
NAND gates; FLASH memory; HOT carriers
- Publication
Electronics (2079-9292), 2021, Vol 10, Issue 15, p1828
- ISSN
2079-9292
- Publication type
Article
- DOI
10.3390/electronics10151828