We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Direct One-Step Plasma-Chemical Synthesis of Nanostructured β-Ga<sub>2</sub>O<sub>3</sub>–GaN Thin Films of Various Compositions.
- Authors
Mochalov, L. A.; Kudryashov, M. A.; Vshivtsev, M. A.; Kudryashova, Yu. P.; Prokhorov, I. O.; Knyazev, A. V.; Almaev, A. V.; Yakovlev, N. N.; Chernikov, E. V.; Erzakova, N. N.
- Abstract
For the first time, nanostructured thin films of the β-Ga2O3−GaN system have been obtained by plasma-enhanced chemical vapor deposition (PECVD) on c-plane sapphire substrates. High-purity gallium metal, as well as high-purity gaseous nitrogen and oxygen, were used as sources of macrocomponents. Low-temperature nonequilibrium plasma of an inductively coupled RF (40.68 MHz) discharge at reduced pressure (0.01 torr) was the initiator of chemical transformations between the reactants. A mixture of oxygen and nitrogen was used as a plasma-forming gas. The plasma-chemical process was studied using optical emission spectroscopy (OES). The resulting β-Ga2O3−GaN thin films with a GaN content of 2 to 7% were characterized by various analytical methods.
- Subjects
THIN films; PLASMA-enhanced chemical vapor deposition; ZINC oxide films; EMISSION spectroscopy; NONEQUILIBRIUM plasmas; CHEMICAL amplification
- Publication
High Energy Chemistry, 2024, Vol 58, Issue 3, p322
- ISSN
0018-1439
- Publication type
Article
- DOI
10.1134/S0018143924700139