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- Title
Bismuth Interfacial Doping of Organic Small Molecules for High Performance n-type Thermoelectric Materials.
- Authors
Huang, Dazhen; Wang, Chao; Zou, Ye; Shen, Xingxing; Zang, Yaping; Shen, Hongguang; Gao, Xike; Yi, Yuanping; Xu, Wei; Di, Chong-an; Zhu, Daoben
- Abstract
Development of chemically doped high performance n-type organic thermoelectric (TE) materials is of vital importance for flexible power generating applications. For the first time, bismuth (Bi) n-type chemical doping of organic semiconductors is described, enabling high performance TE materials. The Bi interfacial doping of thiophene-diketopyrrolopyrrole-based quinoidal (TDPPQ) molecules endows the film with a balanced electrical conductivity of 3.3 S cm−1 and a Seebeck coefficient of 585 μV K−1. The newly developed TE material possesses a maximum power factor of 113 μW m−1 K−2, which is at the forefront for organic small molecule-based n-type TE materials. These studies reveal that fine-tuning of the heavy metal doping of organic semiconductors opens up a new strategy for exploring high performance organic TE materials.
- Subjects
THERMOELECTRICITY; BISMUTH; ORGANIC semiconductors; ELECTRIC conductivity; ELECTRIC power production
- Publication
Angewandte Chemie International Edition, 2016, Vol 55, Issue 36, p10672
- ISSN
1433-7851
- Publication type
Article
- DOI
10.1002/anie.201604478