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- Title
Thick Epitaxial α-Ga2O3:Sn Layers on a Patterned Sapphire Substrate.
- Authors
Nikolaev, V. I.; Pechnikov, A. I.; Guzilova, L. I.; Chikiryaka, A. V.; Shcheglov, M. P.; Nikolaev, V. V.; Stepanov, S. I.; Vasil'ev, A. A.; Shchemerov, I. V.; Polyakov, A. Ya.
- Abstract
Epitaxial layers of a new wide-band semiconductor (α-Ga2O3 doped with tin) have been grown by chloride epitaxy on smooth and patterned substrates, which are widely used to increase the emission yield in high-efficiency LED structures based on InGaN, and studied. The properties of the obtained gallium-oxide layers have been compared. Both types of samples had n-type conductivity, but the frequency and voltage dependences of their capacitance differed. Differences in the dislocation structure of epitaxial α-Ga2O3 layers on smooth and patterned substrates have been identified by X-ray diffractometry.
- Subjects
EPITAXIAL layers; DISLOCATION structure; SAPPHIRES; EPITAXY; SEMICONDUCTORS
- Publication
Technical Physics Letters, 2020, Vol 46, Issue 3, p228
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S106378502003013X