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- Title
Bismuth quantum dots and strong infrared photoluminescence in migration-enhanced epitaxy grown GaAsBi-based structures.
- Authors
Butkutė, Renata; Stašys, Karolis; Pačebutas, Vaidas; Čechavičius, Bronislovas; Kondrotas, Rokas; Geižutis, Andrejus; Krotkus, Arūnas
- Abstract
The strong photoluminescence (PL) signal at wavelengths ranging from 1,300 to 1,500 nm was observed in GaAsBi epitaxial layers grown by migration-enhanced epitaxy and annealed at $$600\,^{\circ }\hbox {C}$$ and higher temperatures. PL measurements at liquid helium temperatures showed two peaks at $$\sim $$ 0.9 and $$\sim $$ 1 eV. It was found that intensity of the higher energy peak decreases with temperature leaving only the lower energy peak at room temperature. Structural investigations demonstrated that annealing reduces Bi content in GaAsBi lattice by precipitating bismuth in nanometer-scale clusters. It is suggested that PL can be caused by the semimetal-semiconductor transition quantum confinement due to the quantum confinement effect in Bi clusters.
- Subjects
BISMUTH; QUANTUM dots; INFRARED radiation; PHOTOLUMINESCENCE; GALLIUM arsenide epitaxy; WAVELENGTHS
- Publication
Optical & Quantum Electronics, 2015, Vol 47, Issue 4, p873
- ISSN
0306-8919
- Publication type
Article
- DOI
10.1007/s11082-014-0019-8