We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Modeling of dark characteristics for long-wavelength HgCdTe photodiode.
- Authors
Quan, Z. J.; Chen, X. S.; Hu, W. D.; Ye, Z. H.; Hu, X. N.; Li, Z. F.; Lu, W.
- Abstract
A data-processing approach has been developed to obtain device parameters from resistance–voltage ( R–V) characteristics measured on long-wavelength HgCdTe n-on-p photodiodes. A simple carrier density approximation is proposed to take account of carrier degeneracy and conduction band non-parabolicity into its physical model. Some basic parameters and their estimated errors can be extracted from the measured R–V curves. The method is applied to fit the R–V curves measured at different temperatures. We also analyze larger amount of long-wavelength HgCdTe n-on-p photodiodes, and obtain statistical device parameters.
- Subjects
PHOTODIODES; SEMICONDUCTOR diodes; ENERGY-band theory of solids; FREE electron theory of metals; NUMERICAL analysis; MATHEMATICAL analysis
- Publication
Optical & Quantum Electronics, 2006, Vol 38, Issue 12-14, p1107
- ISSN
0306-8919
- Publication type
Article
- DOI
10.1007/s11082-006-9046-4