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- Title
Effect and extraction of series resistance in Al<sub>2</sub>O<sub>3</sub>‐InGaAs MOS with bulk‐oxide trap.
- Authors
Yu, B.; Yuan, Y.; Chen, H.‐P.; Ahn, J.; McIntyre, P.C.; Taur, Y.
- Abstract
The effect of parasitic series resistance in the accumulation region has been investigated under the framework of the distributed bulk‐oxide trap model. It is shown that while the series resistance may be too small to impact the total capacitance, it can have a significant effect on the total conductance by adding a term ∝ ω2. It leads to a proposal of an extraction method for series resistance. The enhanced bulk‐oxide trap model with series resistance as well as dielectric leakage can explain the uncommon conductance frequency dispersion data for an Al2O3‐InGaAs MOS capacitor with 2.5 nm thin Al2O3 layer.
- Publication
Electronics Letters (Wiley-Blackwell), 2013, Vol 49, Issue 6, p492
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2013.0433