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- Title
Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown <italic>n</italic>-Hg<sub>1 - <italic>x</italic></sub>Cd<sub><italic>x</italic></sub>Te (<italic>x</italic> = 0.22-0.23) with the Al<sub>2</sub>O<sub>3</sub> Insulator.
- Authors
Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.; Vasil’ev, V. V.; Varavin, V. S.; Dvoretsky, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Sidorov, G. Yu.
- Abstract
The impact of the presence of the near-surface graded-gap layers with an increased content of CdTe on the admittance of MIS structures based on MBE-grown <italic>n</italic>-Hg1-<italic>x</italic>CdxTe (<italic>x</italic> = 0.22-0.23) with the Al2O3 insulating coating has been experimentally studied. It has been shown that the structures with a gradedgap layer are characterized by a deeper and wider capacitance dip in the low-frequency capacitance-voltage (CV) characteristic and by higher values of the differential resistance of the space-charge region than the structures without such a layer. It has been found that the main features of the hysteresis of capacitance dependences typical of the graded-gap structures with SiO2/Si3N4 are also characteristic of the MIS structures with the Al2O3 insulator. The factors that cause an increase in the CV characteristic hysteresis upon formation of the graded-gap layer in structures with SiO2/Si3N4 or Al2O3 are still debatable, although it may be assumed that oxygen plays a certain role in formation of this hysteresis.
- Subjects
ELECTRIC admittance; ELECTRIC immittance; ELECTRIC capacity; HYSTERESIS; ELECTROMAGNETIC induction
- Publication
Journal of Communications Technology & Electronics, 2018, Vol 63, Issue 3, p281
- ISSN
1064-2269
- Publication type
Article
- DOI
10.1134/S106422691803021X