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- Title
The Effect of Introducing Optical Blanking on GaN Epitaxy Using Pulsed Laser Deposition Technology.
- Authors
Kodama, Kazuki; Ueda, Daisuke
- Abstract
The optical blanking operation of pulsed laser deposition (PLD) using a picosecond laser enables the dramatic reduction of sheet resistance with excellent uniformity for the regrowth of heavily Ge‐doped GaN films. Attained carrier density exceeds over 3.5 × 1020 cm−3, which is good enough to achieve nonalloy ohmic contact. The obtained contact resistance is 0.05 Ω mm regardless of the overlaying metal. Blanking duty ratio for the pulse‐mode operation can be simply controlled by rotating the half‐wave plate outside the vacuum chamber. By introducing the blanking mode, the complete elimination of the Ga droplet is achieved even at a growth temperature of 500 °C, showing a decrease in sheet resistance. It is confirmed that the ohmic characteristics remain unchanged on annealing treatment up to 300 °C. The proposed growth technique using laser blanking is free from mechanical shutter; therefore, the technique has superior repeatability in GaN epitaxy. It is believed the present optical blanking operation is a useful technique for the industrialization of practical GaN devices.
- Subjects
PULSED laser deposition; EPITAXY; OHMIC contacts; CARRIER density; ULTRASHORT laser pulses
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2020, Vol 217, Issue 3, pN.PAG
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201900517