Back to matchesWe found a matchYour institution may have access to this item. Find your institution then sign in to continue.TitleElectrical properties of InGaN grown by molecular beam epitaxy.AuthorsSchaff, William J.; Chen, Xiaodong; Hao, Dong; Matthews, Kris; Richards, Troy; Eastman, Lester F.; Lu, Hai; Cho, Clara Ji-Hyun; Cha, Ho-YoungPublicationPhysica Status Solidi (B), 2008, Vol 245, Issue 5, p868ISSN0370-1972Publication typeArticleDOI10.1002/pssb.200778710