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- Title
High‐performance fully transparent Al–Sn–Zn–O thin‐film transistors using double‐channel structures.
- Authors
Cong, Yingying; Han, Dedong; Dong, Junchen; Yu, Wen; Zhang, Xiaomi; Cui, Guodong; Zhang, Xing; Zhang, Shengdong; Wang, Yi
- Abstract
We successfully fabricated the fully transparent Al–Sn–Zn–O thin‐film transistors (ATZO TFTs) on glass by RF magnetron sputtering, and then the electrical performances of the ATZO TFTs are optimized with double‐channel structures. The double‐channel structures are formed by using bilayer ATZO films fabricated successively with different oxygen partial pressure in the sputtering process. The operation mechanism for double‐channel structures were clarified. Owing to the double‐channel structure, the ATZO TFT demonstrates excellent electrical performances, including a high ON/OFF current ratio (Ion/Ioff) of 1.1 × 108, a steep threshold swing SS of 266.3 mV/decade, a superior saturation mobility μsat of 134.1 cm2/Vs, and a threshold voltage VT of 1.2 V.
- Publication
Electronics Letters (Wiley-Blackwell), 2016, Vol 52, Issue 13, p1069
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2016.0896