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- Title
Design of 2D GaN photonic crystal based on hole displacement for L3 cavity.
- Authors
Zamani, Nur Dalila Mohd; Nawi, Mohd Nuriman; Berhanuddin, Dilla Duryha; Majlis, Burhanuddin Yeop; Md Zain, Ahmad Rifqi
- Abstract
In this article, we report modeling, simulation, and analysis of shifting 2D photonic crystal cavity side holes in GaN-AlN-sapphire layered structure. The design was simulated with Lumerical finite-difference time-domain. A lattice constant a, 157 nm, and a hole diameter d, 106 nm, were used in the design. The cavities are based on L3, which we demonstrated by simply shifting two holes away from a line cavity with distances of 132, 142, and 152 nm, respectively. The highest quality factor, Q, value achieved is 2.25 × 104 at 152-nm cavity distance.
- Subjects
PHOTONIC crystals; SAPPHIRES; QUALITY factor; LATTICE constants; PHOTONIC crystal fibers; CRYSTAL whiskers; GALLIUM nitride films
- Publication
Nanomaterials & Nanotechnology, 2020, p1
- ISSN
1847-9804
- Publication type
Article
- DOI
10.1177/1847980420966887