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- Title
N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation.
- Authors
Su, Zhaole; Li, Yangfeng; Hu, Xiaotao; Song, Yimeng; Kong, Rui; Deng, Zhen; Ma, Ziguang; Du, Chunhua; Wang, Wenxin; Jia, Haiqiang; Chen, Hong; Jiang, Yang
- Abstract
High-temperature nitridation is commonly thought of as a necessary process to obtain N-polar GaN films on a sapphire substrate. In this work, high-quality N-polar GaN films were grown on a vicinal sapphire substrate with a 100 nm high-temperature (HT) AlN buffer layer (high V/III ratio) and without an intentional nitriding process. The smallest X-ray full width at half maximum (FWHM) values of the (002)/(102) plane were 237/337 arcsec. On the contrary, N-polar GaN film with an intentional nitriding process had a lower crystal quality. In addition, we investigated the effect of different substrate treatments 1 min before the high-temperature AlN layer's growth on the quality of the N-polar GaN films grown on different vicinal sapphire substrates.
- Subjects
SAPPHIRES; NITRIDATION; NITRIDING; GALLIUM nitride; EPITAXY; BUFFER layers; GALLIUM nitride films
- Publication
Materials (1996-1944), 2022, Vol 15, Issue 9, p3005
- ISSN
1996-1944
- Publication type
Article
- DOI
10.3390/ma15093005