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- Title
Investigation of the Performance of HEMT-Based NO, NO<sub>2</sub> and NH<sub>3</sub> Exhaust Gas Sensors for Automotive Antipollution Systems.
- Authors
Halfaya, Yacine; Bishop, Chris; Soltani, Ali; Sundaram, Suresh; Aubry, Vincent; Voss, Paul L.; Salvestrini, Jean-Paul; Ougazzaden, Abdallah
- Abstract
We report improved sensitivity to NO, NO2 and NH3 gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO2 and 15 ppm-NH3 is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real time.
- Subjects
HIGH electron mobility transistor circuits; NITROGEN oxides; WASTE gases; GAS detectors; ELECTRIC properties of aluminum gallium nitride
- Publication
Sensors (14248220), 2016, Vol 16, Issue 3, p273
- ISSN
1424-8220
- Publication type
Article
- DOI
10.3390/s16030273