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- Title
Crystallization and Failure Behavior of Ta-TM (TM = Fe, Co) Nanostructured/Amorphous Diffusion Barriers for Copper Metallization.
- Authors
Fang, J. S.; Hsu, T. P.; Chen, G. S.
- Abstract
This work examined the thin-film properties and diffusion barrier behavior of sputtered Ta-TM (TM = Fe, Co) films, aiming at depositing a highly crystallization-resistant and conductive diffusion barrier film for Cu metallization. Four-point probe measurement, x-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and a secondary ion mass spectrometer (SIMS) were used to examine the barrier properties. Structural examination indicated that intermetallic-compound-free amorphous Ta-TM films were obtained by magnetron sputtering, thus giving a resistivity of 146.82 µΩ-cm and 247.01 µΩ-cm for Ta0.5Fe0.5 and Ta0.5Co0.5 films, respectively. The Si/Ta0.5Fe0.5/Cu and Si/Ta0.5Co0.5/Cu stacked samples were observed to fail completely at temperature above 650°C and 700°C because of the formation of Cu3Si protrusions between silicon and the Ta-TM interface. Ta0.5Co0.5 is thus superior to Ta0.5Fe0.5 in preventing copper from diffusion. Highly thermally stabilized amorphous Ta-TM thin film can thus be potentially adopted as a diffusion barrier for Cu metallization.
- Subjects
MICROSCOPY; COPPER; THIN films; SPECTROMETERS; CRYSTALLIZATION; SCANNING electron microscopy; SOLID state electronics; SURFACE coatings
- Publication
Journal of Electronic Materials, 2006, Vol 35, Issue 1, p15
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-006-0178-x