We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Room temperature ZnO nanorods based TFT ammonia sensor: an experimental and simulation study.
- Authors
Kumar, Binay Binod; Bhowmik, Basanta; Singh, Abhinav Pratap; Jit, Satyabrata; Singh, Kunal
- Abstract
This study presents a method for growing and characterizing isolated and coalesced ZnO nanorods on a SiO2/p-Si substrate using the chemical bath deposition (CBD) technique. Characterizations of the nanorods were investigated using an X-ray diffractometer (XRD), atomic force microscopy (AFM), photoluminescence spectrofluorometer, and I–V parameter analyzer. The growth of ZnO nanorods significantly impacts the coalesced surface morphology and quantitative structural parameters. Potentiality of the ZnO nanorods based thin film transistor (TFT) as NH3 gas sensor has been explored. Experimental findings of the fabricated device structure were found to be well in agreement with the similar prototype structure simulated in TCAD environment. Maximum drain currents deviation between simulation and experimental study were found to be negligibly ± 0.2%. The ZnO nanorods-based TFT exhibits excellent room temperature sensitivity of ~ 226% at 50 ppm NH3 with threshold voltage shift towards lower VGS (from 9 V in air to 6 V in 50 ppm NH3). The fast response (14 s) and recovery (4 s) characteristics of the TFT sensor proved to be potentiality towards ammonia leakage detection and making it highly useful for industrial safety applications. The room temperature nanorods ammonia sensing mechanism were correlated through band bending at the grain boundaries interfaces following neck-controlled depletion model.
- Subjects
INDIUM gallium zinc oxide; THIN film transistors; NANORODS; CHEMICAL solution deposition; ATOMIC force microscopy; ZINC oxide
- Publication
Applied Physics A: Materials Science & Processing, 2024, Vol 130, Issue 5, p1
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-024-07474-y