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- Title
Metal-insulator transition in epitaxial films of LaMnO manganites grown by magnetron sputtering.
- Authors
Borisenko, I.; Karpov, M.; Ovsyannikov, G.
- Abstract
We have studied thin films of LaMnO manganite grown by RF magnetron sputtering at high pressure on crystalline substrates with cubic symmetry. It is established that these films exhibit a metal-insulator transition, whereas LaMnO grown on orthorhombic substrates remains in a dielectric state. The parameters of the metal-insulator transition have been studied as dependent on the level and symmetry of mechanical stresses that arise during the epitaxial growth of LaMnO films on various substrates. The resistance of LaMnO films grown on SrTiO substrates has been studied as a function of the film thickness. It is found that the presence of excess oxygen due to substitution in the cation system can significantly influence the Mn/Mn ion ratio in the film and thus lead to the appearance of the metal-insulator transition.
- Subjects
METAL-insulator transitions; EPITAXIAL layers; LANTHANUM compounds; MANGANITE; MAGNETRON sputtering; HIGH pressure (Technology); SUBSTRATES (Materials science); DIELECTRICS
- Publication
Technical Physics Letters, 2013, Vol 39, Issue 12, p1027
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785013120055