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- Title
Influence of the position of InGaAs quantum dot array on the spectral characteristics of AlGaAs/GaAs photovoltaic converters.
- Authors
Blokhin, S.; Nadtochiy, A.; Mintairov, S.; Kalyuzhny, N.; Emel'yanov, V.; Nevedomsky, V.; Shvarts, M.; Maximov, M.; Lantratov, V.; Ledentsov, N.; Ustinov, V.
- Abstract
Results of a comparative study of the internal quantum yield of AlGaAs/GaAs photovoltaic converters (PVCs) with variable position of the array of vertically coupled InGaAs quantum dots (QDs) are presented. It is established that the QD array placed immediately at the i-region/base interface does not change the PVC sensitivity compared to that for QDs arranged inside the i-region of the p-n junction. However, the QD array shifted to the base or the back potential barrier decreases the contribution of a base layer to the PVC photocurrent and reduces the photosensitivity of the QD-based medium.
- Subjects
INDIUM gallium arsenide; QUANTUM dots; SPECTRAL theory; PHOTOVOLTAIC power generation; CONVERTERS (Electronics); COMPARATIVE studies; POTENTIAL barrier
- Publication
Technical Physics Letters, 2012, Vol 38, Issue 11, p1024
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785012110193