We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
In Situ Reflection Electron Microscopy for the Analysis of Silicon Surface Processes: Sublimation, Electromigration, and Adsorption of Impurity Atoms.
- Authors
Rogilo, D. I.; Sitnikov, S. V.; Rodyakina, E. E.; Petrov, A. S.; Ponomarev, S. A.; Sheglov, D. V.; Fedina, L. I.; Latyshev, A. V.
- Abstract
The results of recent studies of the structural morphological transformations of Si(111) and Si(100) surfaces using in situ ultrahigh-vacuum reflection electron microscopy (UHV REM) are presented. It is established that high-temperature sublimation from extremely wide Si(111) terraces occurs at a smaller activation energy (3.77 eV) than from the vicinal surface (4.04 eV). A nonmonotonic change in the kinetics of step bunching during a smooth transition from sublimation to growth on the Si(100) surface is recorded. The structural transformations caused by electromigration of positively charged Sn adatoms on the reconstructed Si(111) surface are demonstrated. It is shown that Si(111) surface etching under exposure to a Se molecular beam occurs in a layer-by-layer mode due to the desorption of SiSe2 molecules with activation energy of 2.65 eV.
- Subjects
SILICON surfaces; ELECTRON microscopy; ELECTRODIFFUSION; SURFACE analysis; ATOMS; SUBLIMATION (Chemistry)
- Publication
Crystallography Reports, 2021, Vol 66, Issue 4, p570
- ISSN
1063-7745
- Publication type
Article
- DOI
10.1134/S1063774521040192