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- Title
Specific features of the growth of A B films on (0001)AlO substrates.
- Authors
Butashin, A.; Kanevskii, V.; Muslimov, A.; Rakova, E.; Mikhailov, V.; Babaev, V.; Ismailov, A.; Rabadanov, M.
- Abstract
The structure and orientation of CdTe and ZnO films on sapphire have been investigated for different techniques of pregrowth substrate treatment. Polycrystalline CdTe films are found to grow of substrates unannealed or annealed in vacuum at a residual pressure P < 0.13 Pa. Epitaxial CdTe films with the sphalerite cubic structure, oriented parallel to the substrate by the (111) plane, grow on substrates annealed in air at a temperature of 1000°C or more and having a system of smooth terraces and steps on the surface. For ZnO films with a wurtzite hexagonal structure obtained by magnetron sputtering, a similar correlation between the structural quality and the regime of treatment of sapphire substrates is observed. It is shown that thermal annealing of (0001) sapphire plates in air is the optimal way of substrate preparation for growing epitaxial ZnO films with the base orientation. The obtained epitaxial CdTe films contain a certain amount of structural defects (mosaicity and twins), while the epitaixal ZnO films treated in the same way are close to perfect.
- Subjects
SUBSTRATES (Materials science); ALUMINUM oxide; CADMIUM telluride films; ZINC oxide films; POLYCRYSTALS; SPHALERITE; SAPPHIRES
- Publication
Crystallography Reports, 2014, Vol 59, Issue 3, p418
- ISSN
1063-7745
- Publication type
Article
- DOI
10.1134/S1063774514030067