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- Title
Spin-orbit-splitting-driven nonlinear Hall effect in NbIrTe<sub>4</sub>.
- Authors
Lee, Ji-Eun; Wang, Aifeng; Chen, Shuzhang; Kwon, Minseong; Hwang, Jinwoong; Cho, Minhyun; Son, Ki-Hoon; Han, Dong-Soo; Choi, Jun Woo; Kim, Young Duck; Mo, Sung-Kwan; Petrovic, Cedomir; Hwang, Choongyu; Park, Se Young; Jang, Chaun; Ryu, Hyejin
- Abstract
The Berry curvature dipole (BCD) serves as a one of the fundamental contributors to emergence of the nonlinear Hall effect (NLHE). Despite intense interest due to its potential for new technologies reaching beyond the quantum efficiency limit, the interplay between BCD and NLHE has been barely understood yet in the absence of a systematic study on the electronic band structure. Here, we report NLHE realized in NbIrTe4 that persists above room temperature coupled with a sign change in the Hall conductivity at 150 K. First-principles calculations combined with angle-resolved photoemission spectroscopy (ARPES) measurements show that BCD tuned by the partial occupancy of spin-orbit split bands via temperature is responsible for the temperature-dependent NLHE. Our findings highlight the correlation between BCD and the electronic band structure, providing a viable route to create and engineer the non-trivial Hall effect by tuning the geometric properties of quasiparticles in transition-metal chalcogen compounds. Previous work proposed the Berry curvature dipole as the mechanism of the nonlinear Hall effect. Lee et al. establish the sign-changing Berry curvature hot spots from spin-orbit split bands as the origin of the Berry curvature dipole and link it to the nonlinear Hall effect in the topological semimetal NbIrTe4.
- Subjects
HALL effect; ELECTRONIC band structure; PHOTOELECTRON spectroscopy; SPIN-orbit interactions; QUANTUM efficiency; ENGINEERS
- Publication
Nature Communications, 2024, Vol 15, Issue 1, p1
- ISSN
2041-1723
- Publication type
Article
- DOI
10.1038/s41467-024-47643-4