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- Title
Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels.
- Authors
Van, Ngoc; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae
- Abstract
A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)). We overcame the interfacial layer problem by incorporating P(VDF-TrFE) as a ferroelectric gate using a low-temperature fabrication process. Our memory devices exhibited excellent memory characteristics with a low programming voltage of ±5 V, a large modulation in channel conductance between ON and OFF states exceeding 10, a long retention time greater than 3 × 10 s, and a high endurance of over 10 programming cycles while maintaining an I/ I ratio higher than 10.
- Subjects
NONVOLATILE memory; COMPUTER storage devices; FERROELECTRIC devices; FIELD-effect transistors; SILICON nanowires
- Publication
Nano-Micro Letters, 2015, Vol 7, Issue 1, p35
- ISSN
2311-6706
- Publication type
Article
- DOI
10.1007/s40820-014-0016-2