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- Title
Effect of growth stoichiometry on the structural properties of AlN films on thermally nitrided sapphire $(11\bar 20)$.
- Authors
UENo, Kohei; Kishikawa, Eiji; Inoue, Shigeru; Ohta, Jitsuo; Fujioka, Hiroshi; Oshima, Masaharu; Fukuyama, Hiroyuki
- Abstract
High-quality AlN epilayers were grown via pulsed sputtering deposition on thermally nitrided sapphire $(11\bar 20)$ with precise control of the N/Al ratio. Under slightly Al-rich growth conditions, the growth of AlN epilayers on the thermally nitrided sapphire proceeded in a two-dimensional mode from the initial stage of growth, and their surfaces were atomically flat stepped and terraced structures. The FWHM values of the X-ray rocking curves were as low as 87 arcsec and 339 arcsec for the 0002 and $1 \bar 102$ diffractions, respectively, at a film thickness of 400 nm. The present approach is therefore quite promising for the low-cost fabrication of AlGaN-based UV optical devices. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
- Subjects
STOICHIOMETRY; NITRIDES; SPUTTERING (Physics); OPTICAL devices; THIN films
- Publication
Physica Status Solidi - Rapid Research Letters, 2014, Vol 8, Issue 3, p256
- ISSN
1862-6254
- Publication type
Article
- DOI
10.1002/pssr.201308275