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- Title
Features of the selective manganese doping of GaAs structures.
- Authors
Kalentyeva, I.; Vikhrova, O.; Danilov, Yu.; Zvonkov, B.; Kudrin, A.; Dorokhin, M.; Pavlov, D.; Antonov, I.; Drozdov, M.; Usov, Yu.
- Abstract
The effect of technological parameters on the selective manganese doping of arsenide-gallium heterostructures fabricated by a combination of methods of MOS-hydride epitaxy and pulsed-laser deposition is investigated. As these parameters, the impurity content in the manganese δ layer and the structureformation temperature are used. It is established that the prepared structures demonstrate the highest electrical activity and have ferromagnetic properties at a growth temperature of ~400°C and an impurity content of no higher than 0.2-0.3 monolayers. Studying the grown structures by the methods of reflection spectroscopy, high-resolution transmission electron microscopy, and secondary-ion mass spectrometry shows that use of the above conditions in the case of pulsed laser deposition makes it possible to obtain arsenide-gallium structures, which have good crystalline quality, and manganese is concentrated in them within a thin (7-8 nm) layer without substantial diffusion-induced spreading and segregation.
- Subjects
FERROMAGNETIC materials; FERROMAGNETISM; GALLIUM arsenide transistors; TRANSMISSION electron microscopy; ELECTRON microscopy
- Publication
Semiconductors, 2017, Vol 51, Issue 11, p1415
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782617110148