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- Title
Optical properties of hybrid quantum-well-dots nanostructures grown by MOCVD.
- Authors
Mintairov, S.; Kalyuzhnyy, N.; Nadtochiy, A.; Maximov, M.; Rouvimov, S.; Zhukov, A.
- Abstract
The deposition of InGaAs with an indium content of 0.3-0.5 and an average thickness of 3-27 single layers on a GaAs wafer by metalorganic chemical vapor deposition (MOCVD) at low temperatures results in the appearance of thickness and composition modulations in the layers being formed. Such structures can be considered to be intermediate nanostructures between ideal quantum wells and quantum dots. Depending on the average thickness and composition of the layers, the wavelength of the photoluminescence peak for the hybrid InGaAs quantum well-dots nanostructures varies from 950 to 1100 nm. The optimal average InGaAs thicknesses and compositions at which the emission wavelength is the longest with a high quantum efficiency retained are determined.
- Subjects
OPTICAL properties of quantum dots; QUANTUM wells; METAL organic chemical vapor deposition; GALLIUM arsenide wafers; PHOTOLUMINESCENCE measurement
- Publication
Semiconductors, 2017, Vol 51, Issue 3, p357
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782617030198