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- Title
Strain and particle size analysis in ion beam synthesized SiC nanoparticles using Raman scattering studies.
- Authors
Saravanan, K.; Jayalakshmi, G.; Panigrahi, B. K.; Hübner, René
- Abstract
We study the strain and particle size analysis of ion beam synthesized SiC nanoparticles (NPs) embedded in Si matrix using Raman and low-frequency Raman scattering (LFRS). 300 keV C+ ions with the fluence of 2 × 1017 ions/cm2 were implanted on Si substrate at three different substrate temperatures (300, 500 and 650 °C). Raman scattering analyses confirm the formation of 3C-SiC NPs in Si matrix. Relative strain in 3C-SiC NPs estimated from Raman scattering was found to be decreases with increase of substrate temperature. The particle size distribution of 3C-SiC NPs was estimated from the signature of localized acoustic phonon modes observed in the low frequency region
- Subjects
NANOPARTICLE synthesis; SILICON carbide; PARTICLE size distribution; RAMAN scattering; TEMPERATURE effect; SUBSTRATES (Materials science)
- Publication
Crystal Research & Technology, 2017, Vol 52, Issue 5, pn/a
- ISSN
0232-1300
- Publication type
Article
- DOI
10.1002/crat.201600391