We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530-560 nm range.
- Authors
Lundin, W.; Nikolaev, A.; Sakharov, A.; Zavarin, E.; Usov, S.; Sizov, V.; Zakgeim, A.; Chernyakov, A.; Tsatsul'nikov, A.
- Abstract
new method of forming the active region in high-efficiency InGaN/GaN/AlGaN light-emitting diode (LED) structure for long-wave green range is described. The introduction of a short-period InGaN/GaN superlattice situated immediately under the emitting quantum well and overgrown with GaN layer at reduced temperature leads to a more than tenfold increase in the efficiency of emission. For the proposed LEDs, the maximum quantum efficiency was 12% at 552 nm and 8% at 560 nm.
- Subjects
GALLIUM nitride; LIGHT emitting diodes; SUPERLATTICES; QUANTUM wells; TEMPERATURE effect; QUANTUM efficiency; CRYSTAL growth; FIELD emission
- Publication
Technical Physics Letters, 2010, Vol 36, Issue 11, p1066
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785010110283