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- Title
Nanostructured InSiAs Solid Solution Grown by Molecular Beam Epitaxy on the Si(001) Surface.
- Authors
Tsyrlin, G. É.; Samsonenko, Yu. B.; Petrov, V. N.; Polyakov, N. K.; Egorov, V. A.; Masalov, S. A.; Gorbenko, O. M.; Golubok, A. O.; Soshnikov, I. P.; Ustinov, V. M.
- Abstract
The possibility of obtaining a new nanostructured material, an InSiAs solid solution, by molecular beam epitaxy on the Si(001) surface is reported. It is demonstrated that, during simultaneous deposition of indium, silicon, and arsenic, nanometer-size islands with a rectangular base and the sides oriented along the {110} directions can form when the layer thickness exceeds 35 nm. After depositing a 100 nm thick layer of the solid solution, islands with the side ratio d[sub 110]/d[sub 1&1macr;0] = 1.35 and a typical lateral size of d1[sub 1¯0 ∼ 35 ± 10 nm are obtained.
- Subjects
NANOSTRUCTURED materials; MOLECULAR beam epitaxy
- Publication
Technical Physics Letters, 2000, Vol 26, Issue 9, p781
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1315492