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- Title
AlN/GaN heterostructures for normally-off transistors.
- Authors
Zhuravlev, K.; Malin, T.; Mansurov, V.; Tereshenko, O.; Abgaryan, K.; Reviznikov, D.; Zemlyakov, V.; Egorkin, V.; Parnes, Ya.; Tikhomirov, V.; Prosvirin, I.
- Abstract
The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of ~1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.
- Subjects
HETEROSTRUCTURES; ELECTRON gas; TRANSISTORS testing; ELECTROMAGNETIC current density measurement; PERFORMANCE of Schottky-barrier diodes
- Publication
Semiconductors, 2017, Vol 51, Issue 3, p379
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782617030277