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MBE-grown MCT hetero- and nanostructures for IR and THz detectors.
Published in:
Opto-Electronics Review, 2019, v. 27, n. 3, p. 282, doi. 10.1016/j.opelre.2019.07.002
By:
- Dvoretsky, S.A.;
- Mikhailov, N.N.;
- Remesnik, V.G.;
- Sidorov, Yu.G.;
- Shvets, V.A.;
- Ikusov, D.G.;
- Varavin, V.S.;
- Yakushev, M.V.;
- Gumenjuk-Sichevska, J.V.;
- Golenkov, A.G.;
- Lysiuk, I.O.;
- Tsybrii, Z.F.;
- Shevchik-Shekera, A.V.;
- Sizov, F.F.;
- Latyshev, A.V.;
- Aseev, A.L.
Publication type:
Article
Infrared photodetectors based on the system 'HgCdTe photodiode - direct-injection readout circuit'.
Published in:
Opto-Electronics Review, 2011, v. 19, n. 2, p. 198, doi. 10.2478/s11772-011-0010-x
By:
- Gumenjuk-Sichevska, J.;
- Karnaushenko, D.;
- Lee, I.;
- Polovinkin, V.
Publication type:
Article
Changes in 8–12 μm CdHgTe photodiode arrays caused by fast neutron irradiation.
Published in:
Opto-Electronics Review, 2010, v. 18, n. 3, p. 342, doi. 10.2478/s11772-010-1019-6
By:
- Lysiuk, I.O.;
- Gumenjuk-Sichevska, J.V.;
- Dvoretsky, S.A.;
- Varavin, V.S.
Publication type:
Article
Linear HgCdTe IR FPA 288×4 with bidirectional scanning.
Published in:
Opto-Electronics Review, 2010, v. 18, n. 3, p. 332, doi. 10.2478/s11772-010-1021-z
By:
- Vasilyev, V.V.;
- Predein, A.V.;
- Varavin, V.S.;
- Mikhailov, N.N.;
- Dvoretsky, S.A.;
- Gumenjuk-Sichevska, J.V.;
- Golenkov, A.G.;
- Reva, V.P.;
- Sabinina, I.V.;
- Sidorov, Yu.G.;
- Susliakov, A.O.;
- Sizov, F.F.;
- Aseev, A.L
Publication type:
Article
Silicon field-effect transistors as radiation detectors for the Sub-THz range.
Published in:
Semiconductors, 2012, v. 46, n. 5, p. 678, doi. 10.1134/S1063782612050107
By:
- But, D.;
- Golenkov, O.;
- Sakhno, N.;
- Sizov, F.;
- Korinets, S.;
- Gumenjuk-Sichevska, J.;
- Reva, V.;
- Bunchuk, S.
Publication type:
Article
Simulation of relaxation times and energy spectra of the CdTe/HgCdTe/CdTe quantum well for variable valence band offset, well width, and composition x.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1321, doi. 10.1134/S1063782610100143
By:
- Melezhik, E. O.;
- Gumenjuk-Sichevska, J. V.;
- Sizov, F. F.
Publication type:
Article
Spin-dependent polarization response in HgCdTe hot-electron bolometers.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 3, p. 254, doi. 10.15407/spqeo25.03.254
By:
- Sizov, F. F.;
- Gumenjuk-Sichevska, J. V.;
- Danilov, S. N.;
- Tsybrii, Z. F.
Publication type:
Article
Spintronics phenomena induced by THz radiation in narrow-gap HgCdTe thin films in an external constant electric field.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 2, p. 185, doi. 10.15407/spqeo24.02.185
By:
- Tsybrii, Z. F.;
- Danilov, S. N.;
- Gumenjuk-Sichevska, J. V.;
- Mikhailov, N. N.;
- Dvoretskii, S. A.;
- Melezhik, E. O.;
- Sizov, F. F.
Publication type:
Article
Dynamical screening function and plasmons in the wide HgTe quantum wells at high temperatures.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 2, p. 187, doi. 10.15407/spqeo21.02.187
By:
- Melezhik, E. O.;
- Sizov, F. F.;
- Mikhailov, N. N.;
- Gumenjuk-Sichevska, J. V.
Publication type:
Article
Composition and concentration dependences of electron mobility in semi-metal Hg1-xCdxTe quantum wells.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 297, doi. 10.15407/spqeo18.03.297
By:
- Melezhik, E. O.;
- Gumenjuk-Sichevska, J. V.;
- Sizov, F. F.
Publication type:
Article
Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 40
By:
- Golenkov, A. G.;
- Zhuravlev, K. S.;
- Gumenjuk-Sichevska, J. V.;
- Lysiuk, I. O.;
- Sizov, F. F.
Publication type:
Article
Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 2, p. 179
By:
- Melezhik, E. O.;
- Gumenjuk-Sichevska, J. V.;
- Dvoretskii, S. A.
Publication type:
Article
Electron relaxation and mobility in the inverted band quantum well CdTe/Hg1-xCdxTe/CdTe.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 85
By:
- Melezhik, Ye. O.;
- Gumenjuk-Sichevska, J. V.;
- Sizov, F. F.
Publication type:
Article
Simulated properties of printed antennas on silicon substrates for THz/sub-THz arrays.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 1, p. 55
By:
- Sakhno, M. V.;
- Gumenjuk-Sichevska, J. V.;
- Sizov, F. F.
Publication type:
Article
Properties of CdTe thin films prepared by hot wall epitaxy.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 2, p. 129
By:
- Bilevych, Ye. O.;
- Boka, A.I.;
- Darchuk, L.O.;
- Gumenjuk-Sichevska, J.V.;
- Sizov, F.F.;
- Boelling, O.;
- Sulkio-Cleff, B.
Publication type:
Article
Oscillatory Regularity of Charge Carrier Trap Energy Spectra in ZnSe Single Crystals.
Published in:
Acta Physica Polonica: A, 2016, v. 129, n. 3, p. 304, doi. 10.12693/APhysPolA.129.304
By:
- DEGODA, V.;
- GUMENJUK, A.;
- PAVLOVA, N.;
- SOFIIENKO, A.;
- SULIMA, S.
Publication type:
Article
Charge Transport in HgCdTe-based n[sup +]–p Photodiodes.
Published in:
Semiconductors, 2001, v. 35, n. 7, p. 800, doi. 10.1134/1.1385716
By:
- Gumenjuk-Sichevskaja, J. V.;
- Sizov, F. F.;
- Ovsyuk, V. N.;
- Vasil’ev, V. V.;
- Esaev, D. G.
Publication type:
Article
Modeling of Noise and Resistance of Semimetal Hg1-xCdxTe Quantum Well used as a Channel for THz Hot-Electron Bolometer.
Published in:
Nanoscale Research Letters, 2016, v. 11, p. 1, doi. 10.1186/s11671-016-1405-x
By:
- Melezhik, E. O.;
- Gumenjuk-Sichevska, J. V.;
- Sizov, F. F.
Publication type:
Article

Found: 18

MBE-grown MCT hetero- and nanostructures for IR and THz detectors.

Infrared photodetectors based on the system 'HgCdTe photodiode - direct-injection readout circuit'.

Changes in 8–12 μm CdHgTe photodiode arrays caused by fast neutron irradiation.

Linear HgCdTe IR FPA 288×4 with bidirectional scanning.

Silicon field-effect transistors as radiation detectors for the Sub-THz range.

Simulation of relaxation times and energy spectra of the CdTe/HgCdTe/CdTe quantum well for variable valence band offset, well width, and composition x.

Spin-dependent polarization response in HgCdTe hot-electron bolometers.

Spintronics phenomena induced by THz radiation in narrow-gap HgCdTe thin films in an external constant electric field.

Dynamical screening function and plasmons in the wide HgTe quantum wells at high temperatures.

Composition and concentration dependences of electron mobility in semi-metal Hg1-xCdxTe quantum wells.

Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs.

Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition.

Electron relaxation and mobility in the inverted band quantum well CdTe/Hg<sub>1-x</sub>Cd<sub>x</sub>Te/CdTe.

Simulated properties of printed antennas on silicon substrates for THz/sub-THz arrays.

Properties of CdTe thin films prepared by hot wall epitaxy.

Oscillatory Regularity of Charge Carrier Trap Energy Spectra in ZnSe Single Crystals.

Charge Transport in HgCdTe-based n[sup +]–p Photodiodes.

Modeling of Noise and Resistance of Semimetal Hg<sub>1-x</sub>Cd<sub>x</sub>Te Quantum Well used as a Channel for THz Hot-Electron Bolometer.