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- Title
Properties of Ge Nanocrystals Formed by Implantation of Ge[sup +] Ions into SiO[sub 2] Films with Subsequent Annealing under Hydrostatic Pressure.
- Authors
Tyschenko, I. E.; Talochkin, A. B.; Cherkov, A. G.; Zhuravlev, K. S.; Misiuk, A.; Voelskow, M.; Skorupa, W.
- Abstract
The influence of hydrostatic compression on the implantation-induced synthesis of Ge nanocrystals in SiO[sub 2] host was studied. It is found that high-temperature annealing under pressure leads to retardation of Ge diffusion in SiO[sub 2]. It is shown that unstressed Ge nanocrystals are formed as a result of conventional annealing (under atmospheric pressure). Annealing under pressure is accompanied by formation of hydrostatically stressed Ge nanocrystals. The stress in Ge nanocrystals was determined from optical-phonon frequencies in the Raman spectra. The shift of Raman resonance energy (E[sub l], E[sub 1] + Δ[sub l]) corresponds to the quantization of the ground-state energy for a two-dimensional exciton at the critical point M[sub 1] of germanium. It is ascertained that a photoluminescence band peaked at 520 nm is observed only in the spectra of the films which contain stressed Ge nanocrystals.
- Subjects
CRYSTALS; THIN films
- Publication
Semiconductors, 2003, Vol 37, Issue 4, p462
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1568469