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- Title
Preparation of Atomically Clean and Structurally Ordered Surfaces of Epitaxial CdTe Films for Subsequent Epitaxy.
- Authors
Tarasov, A. S.; Mikhailov, N. N.; Dvoretsky, S. A.; Menshchikov, R. V.; Uzhakov, I. N.; Kozhukhov, A. S.; Fedosenko, E. V.; Tereshchenko, O. E.
- Abstract
An atomically clean and structurally ordered surface of the CdTe layer of a (013)-oriented GaAs/ZnTe/CdTe substrate after storage in air is obtained by treatment in isopropyl alcohol saturated with hydrochloric-acid vapors, with subsequent thermal annealing in ultrahigh vacuum. It is shown that chemical treatment of the CdTe surface results in the removal of native oxides and in enrichment of the surface with an elemental Te layer. During heating in vacuum, two stages of change in the state of the surface (at ~125 and ≤250°C) are observed. At the temperature T > 250°C, elemental tellurium is desorbed, and a Te-stabilized (1 × 1) CdTe(013) structure is formed.
- Subjects
EPITAXY; CLEANING compounds; ULTRAHIGH vacuum; ISOPROPYL alcohol; SURFACE states
- Publication
Semiconductors, 2021, Vol 55, Issue 1, pS62
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782621090220