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- Title
Investigation into Microwave Absorption in Semiconductors for Frequency-Multiplication Devices and Radiation-Output Control of Continuous and Pulsed Gyrotrons.
- Authors
Maremyanin, K. V.; Parshin, V. V.; Serov, E. A.; Rumyantsev, V. V.; Kudryavtsev, K. E.; Dubinov, A. A.; Fokin, A. P.; Morosov, S. S.; Aleshkin, V. Ya.; Glyavin, M. Yu.; Denisov, G. G.; Morozov, S. V.
- Abstract
The results of experimental investigation into the dielectric losses in GaAs, InP:Fe, and Si semiconductor crystals in the millimeter wavelength range (80–260 GHz) using the original precise method of measuring the reflectance and dielectric-loss tangent tanδ based on open high-quality Fabry–Perot cavities are presented. It is shown that the losses in the frequency range from 100 to 260 GHz in ultrapure semiconductor single-crystal GaAs substrates are mainly determined by lattice absorption, while the main loss mechanism in single-crystal silicon is absorption by free carriers; herewith, tan δ ≈ (1–2) × 10–4 even for a noticeable, at a level of 1012 cm–3, free carrier concentration. In contrast with GaAs and Si, tanδ in compensated InP:Fe crystals is almost independent of frequency in the range from 100 to 260 GHz, which is associated with the material conductivity and optimization of microwave semiconductor devices, in particular, frequency-multiplication devices and devices of the controlled emission output of continuous and pulsed gyrotrons.
- Subjects
GYROTRONS; MICROWAVE devices; ABSORPTION; CARRIER density; DIELECTRIC loss; SEMICONDUCTOR devices
- Publication
Semiconductors, 2020, Vol 54, Issue 9, p1069
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782620090195