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- Title
Structural and electrical properties of TZO MOS capacitors.
- Authors
Rajvee, Mohammad Hayath; Chandra, S. V. Jagadeesh; Rao, B. Eswara; Raman, Y. S. V.; Kumar, P. Rajesh
- Abstract
ZrTiO2 dielectric thin films were successfully deposited on p-Si(100) substrate using sol–gel spin coating technique. The rotational speed influenced structural, optical and dielectric properties of TZO films were studied thoroughly. A notable hoist in the packaging density and surface roughness of the TZO films were clearly observed in AFM images after annealing. The physical thickness and refractive index of the films increased significantly with respect to rotational speed. The dielectric constant of the proposed ZrTiO2 MOS devices was also increased. The interface quality at TZO/Si stacks was improved conspicuously in annealed TZO devices.
- Subjects
DIELECTRIC thin films; METAL oxide semiconductor capacitors; DIELECTRIC properties; PERMITTIVITY; SURFACE roughness; CAPACITORS; DIELECTRIC films
- Publication
Applied Physics A: Materials Science & Processing, 2022, Vol 128, Issue 12, p1
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-022-06143-2