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- Title
Memristive operations demonstrated by gap-type atomic switches.
- Authors
Hasegawa, Tsuyoshi; Nayak, Alpana; Ohno, Takeo; Terabe, Kazuya; Tsuruoka, Tohru; Gimzewski, James; Aono, Masakazu
- Abstract
We demonstrate memristive operations using gap-type AgS atomic switches, in which the growth and shrinkage of an Ag protrusion are controlled by using solid-electrochemical reactions. In addition to conventional memristive operations such as those proposed and demonstrated by resistive random-access memories (ReRAMs) using metal oxide compounds, gap-type AgS atomic switches also show new types of memristive operations by storing information from input signals without changing their output until a sufficient number of signals are inputted. The new types of memristive operations resemble the learning process seen in neuroplasticity, where changes occur in the organization of the human brain as a result of experience.
- Subjects
ELECTRIC switchgear; ELECTRIC resistors; SILVER sulfide; ELECTROCHEMISTRY; CHEMICAL reactions; RANDOM access memory; INFORMATION retrieval
- Publication
Applied Physics A: Materials Science & Processing, 2011, Vol 102, Issue 4, p811
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-011-6317-0