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- Title
Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current.
- Authors
Youngblood, Nathan; Chen, Che; Koester, Steven J.; Li, Mo
- Abstract
Layered two-dimensional materials have demonstrated novel optoelectronic properties and are well suited for integration in planar photonic circuits. Graphene, for example, has been utilized for wideband photodetection. However, because graphene lacks a bandgap, graphene photodetectors suffer from very high dark current. In contrast, layered black phosphorous, the latest addition to the family of two-dimensional materials, is ideal for photodetector applications due to its narrow but finite bandgap. Here, we demonstrate a gated multilayer black phosphorus photodetector integrated on a silicon photonic waveguide operating in the near-infrared telecom band. In a significant advantage over graphene devices, black phosphorus photodetectors can operate under bias with very low dark current and attain an intrinsic responsivity up to 135 mA W−1 and 657 mA W−1 in 11.5-nm- and 100-nm-thick devices, respectively, at room temperature. The photocurrent is dominated by the photovoltaic effect with a high response bandwidth exceeding 3 GHz.
- Subjects
PHOTODETECTORS; PHOSPHORUS; DARK currents (Electric); WAVEGUIDES; BAND gaps; BANDWIDTHS; PHOTOVOLTAIC power generation
- Publication
Nature Photonics, 2015, Vol 9, Issue 4, p247
- ISSN
1749-4885
- Publication type
Article
- DOI
10.1038/nphoton.2015.23