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- Title
Structural and dielectric properties of BaNdTiO (x = 2/3) thin films processed by sol-gel technique.
- Authors
Zhu, Weixin; Zhang, Yao; Yang, Yixi; Zhou, Dong; Yang, Chengtao
- Abstract
BaNdTiO (x = 2/3, BNT) thin films were obtained by the Pechini sol-gel technique on the Si and Pt/Ti/SiO/Si substrates. The heat treatment schedule was researched by differential scanning calorimetry and thermal gravimetry. The effects of annealing temperature on crystallinity and morphological characteristic were investigated by X-ray diffraction and scanning electron microscope. The results show that a crystallized thin film with a tungsten bronze structure was obtained by annealing the films at 950 °C. With the aid of 2 wt% BO-2SiO addition, the crystallization temperature decreased to 900 °C. The dielectric characteristics measurement showed that the dielectric constant and the dielectric loss of the BNT thin films were 45.2 and 0.011 at 1 MHz frequency, the leakage current density was 4.13 × 10 A/cm at bias of 30 V.
- Subjects
THIN film manufacturing; SOL-gel processes; TITANIUM dioxide films; ANNEALING of metals; TUNGSTEN bronze; ELECTROMAGNETIC current density measurement; PERMITTIVITY measurement
- Publication
Journal of Materials Science: Materials in Electronics, 2015, Vol 26, Issue 2, p927
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-014-2484-z