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- Title
A complementary low-Schottky-barrier S/D-based nanoscale dopingless bidirectional reconfigurable field effect transistor with an improved forward current.
- Authors
Jin, Xiaoshi; Zhang, Shouqiang; Zhao, Chunrong; Li, Meng; Liu, Xi
- Abstract
In this paper, a nanoscale dopingless bidirectional RFET (BRFET) is proposed. Unlike conventional BRFETs, the proposed BRFET uses two different metal materials to form two different types of Schottky barriers on the interface between the S/D and silicon. For one of the two metal forms, the Schottky barrier height between the conduction band of the semiconductor and one of the two metal materials is lower than half of the energy band gap. The Schottky barrier height between the valence band of the semiconductor and the other kind of the two metal materials is lower than half of the energy band gap of the semiconductor. Therefore, a complementary low Schottky barrier (CLSB) is formed. Therefore, more carriers from the source electrode can easily flow into the semiconductor region through thermionic emission in both n-mode and p-mode compared to conventional BRFET operation, which generates carriers through the band-to-band tunneling effect. Therefore, a larger forward current can be achieved by the proposed CLSB-BRFET. The performance of the CLSB-BRFET is investigated by device simulation and compared with that of the BRFET. The working principle is interpreted through an analysis based on energy band theory. The output characteristics and reconfigurable function are also investigated and verified.
- Subjects
ENERGY-band theory of solids; SCHOTTKY barrier; FIELD-effect transistors; QUANTUM tunneling; CONDUCTION bands; ENERGY bands
- Publication
Discover Nano, 2023, Vol 18, Issue 1, p1
- ISSN
2731-9229
- Publication type
Article
- DOI
10.1186/s11671-023-03835-3