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- Title
Elastic State of Stress in Narrow-Gap Semiconductors: A Fundamental Possibility to Increase the Quantum Yield of Infrared Radiation.
- Authors
Gassan-Zade, S. G.; Staryı, S. V.; Strikha, M. V.; Shepel’skiı, G. A.; Boıko, V. A.
- Abstract
In a narrow-gap semiconductor with a direct band gap, an elastic state of stress provides the possibility to considerably reduce the collisional interband recombination because of the transformation of the valence band. As a result, the quantum yield of infrared radiation in the interband transition region increases drastically. The experimental results are obtained for InSb crystals. © 2001 MAIK “Nauka / Interperiodica”.
- Subjects
SEMICONDUCTORS; PHYSICS
- Publication
JETP Letters, 2001, Vol 73, Issue 9, p495
- ISSN
0021-3640
- Publication type
Article
- DOI
10.1134/1.1385666